Buffer layer engineering of L1<sub>0</sub> FePd thin films with large perpendicular magnetic anisotropy
نویسندگان
چکیده
Development of L10 FePd thin films with large bulk perpendicular magnetic anisotropy and a low damping constant may permit superior scaling next-generation ultra-high density memory elements. The buffer layer influences the L10-order parameter, static dynamic properties demands consideration for design high strength films. In this report, we systematically investigate engineered through Cr/(Pt, Ru, Ir, Rh), Mo/Ir, Ir layers. We observed that Ir(001), Cr(001)/Ir(001), Cr(001)/Pt(001), Cr(001)/Rh(001), Cr(001)/Ru(001) layers can induce highly oriented (001) while Mo/Ir does not. Of all layers, largest Ku ∼ 1.2 MJ/m3 α 0.005 were achieved Cr/Pt buffered sample, consistent ordering parameter S 0.82. Cr/Ru sample shows lowest 0.008, despite having lower 0.64 0.9 MJ/m3. These film-level would be sufficient engineering devices require thermally stable, sub-10 nm lateral size elements applications energy-delay devices.
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2021
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0033287